Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. STI200N6F3
STI200N6F3
STI200N6F3
Favorite Products
Share:  

STI200N6F3

STI200N6F3
STMicroelectronics
MOSFET N-CH 60V 120A I2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Base Product Number
STI200N
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Package
Tube
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
4V @ 250µA
Power Dissipation (Max)
330W (Tc)
Supplier Device Package
I2PAK (TO-262)
Product Status
Obsolete
Drain to Source Voltage (Vdss)
60 V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 60A, 10V
FET Feature
-
Series
STripFET™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
6265 pF @ 25 V
FET Type
N-Channel
Mfr
STMicroelectronics
Gate Charge (Qg) (Max) @ Vgs
101 nC @ 10 V
TOP
RFQ List ( 0 items)