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SPP10N10

SPP10N10
Infineon Technologies
MOSFET N-CH 100V 10.3A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Operating Temperature
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id
4V @ 21µA
Series
SIPMOS®
Package
Tube
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
Package / Case
TO-220-3
Base Product Number
SPP10N
FET Type
N-Channel
Power Dissipation (Max)
50W (Tc)
Mounting Type
Through Hole
Product Status
Obsolete
Supplier Device Package
PG-TO220-3-1
Current - Continuous Drain (Id) @ 25°C
10.3A (Tc)
Rds On (Max) @ Id, Vgs
170mOhm @ 7.8A, 10V
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
426 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
19.4 nC @ 10 V
FET Feature
-
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