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R6530ENXC7G
R6530ENXC7G
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R6530ENXC7G

R6530ENXC7G
Rohm Semiconductor
650V 30A TO-220FM, LOW-NOISE POW
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Power Dissipation (Max)
86W (Tc)
Mounting Type
Through Hole
Mfr
Rohm Semiconductor
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
140mOhm @ 14.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 25 V
Series
-
Product Status
Active
FET Type
N-Channel
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
30A (Ta)
Vgs (Max)
±20V
Package
Tube
Operating Temperature
150°C (TJ)
Vgs(th) (Max) @ Id
4V @ 960µA
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