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SCT3022KLGC11
SCT3022KLGC11
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SCT3022KLGC11

SCT3022KLGC11
Rohm Semiconductor
SICFET N-CH 1200V 95A TO247N
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
2879 pF @ 800 V
Vgs (Max)
+22V, -4V
Base Product Number
SCT3022
Mfr
Rohm Semiconductor
Product Status
Active
FET Feature
-
Series
-
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
18V
Operating Temperature
175°C (TJ)
Technology
SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C
95A (Tc)
Gate Charge (Qg) (Max) @ Vgs
178 nC @ 10 V
Mounting Type
Through Hole
Rds On (Max) @ Id, Vgs
28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id
5.6V @ 18.2mA
FET Type
N-Channel
Package
Tube
Power Dissipation (Max)
427W
Package / Case
TO-247-3
Supplier Device Package
TO-247N
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