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IRLU8259PBF
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IRLU8259PBF

IRLU8259PBF
Infineon Technologies
MOSFET N-CH 25V 57A IPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
57A (Tc)
Vgs(th) (Max) @ Id
2.35V @ 25µA
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
25 V
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 13 V
Series
HEXFET®
Product Status
Obsolete
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.7mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Package
Tube
Power Dissipation (Max)
48W (Tc)
Technology
MOSFET (Metal Oxide)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Mfr
Infineon Technologies
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