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SIHU4N80AE-GE3
SIHU4N80AE-GE3
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SIHU4N80AE-GE3

SIHU4N80AE-GE3
Vishay Siliconix
MOSFET N-CH 800V 4.3A IPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
4V @ 250µA
Series
E
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Product Status
Active
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
622 pF @ 100 V
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
SIHU4
Supplier Device Package
IPAK (TO-251)
Mounting Type
Through Hole
Vgs (Max)
±30V
Package
Tube
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
1.27Ohm @ 2A, 10V
FET Feature
-
Mfr
Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Power Dissipation (Max)
69W (Tc)
Drain to Source Voltage (Vdss)
800 V
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