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IRFB3006PBF

IRFB3006PBF
Infineon Technologies
MOSFET N-CH 60V 195A TO220AB
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Active
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Power Dissipation (Max)
375W (Tc)
FET Type
N-Channel
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
TO-220-3
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
8970 pF @ 50 V
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Mfr
Infineon Technologies
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Series
HEXFET®
Base Product Number
IRFB3006
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 170A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
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