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SI7655ADN-T1-GE3
SI7655ADN-T1-GE3
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SI7655ADN-T1-GE3

SI7655ADN-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 40A PPAK1212-8S
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Operating Temperature
-50°C ~ 150°C (TJ)
Mfr
Vishay Siliconix
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Base Product Number
SI7655
Vgs(th) (Max) @ Id
1.1V @ 250µA
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±12V
FET Feature
-
Power Dissipation (Max)
4.8W (Ta), 57W (Tc)
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Series
TrenchFET®
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
3.6mOhm @ 20A, 10V
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
6600 pF @ 10 V
Mounting Type
Surface Mount
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Active
Gate Charge (Qg) (Max) @ Vgs
225 nC @ 10 V
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