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R6535ENZ4C13
R6535ENZ4C13
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R6535ENZ4C13

R6535ENZ4C13
Rohm Semiconductor
650V 35A TO-247, LOW-NOISE POWER
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
Rohm Semiconductor
Power Dissipation (Max)
379W (Tc)
Supplier Device Package
TO-247G
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Rds On (Max) @ Id, Vgs
115mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id
4V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 25 V
Mounting Type
Through Hole
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
650 V
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Series
-
Package
Tube
FET Feature
-
Operating Temperature
150°C (TJ)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
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