Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

Favorite Products

Share:

BSS87E6327

Product Name BSS87E6327

Manufacturer Infineon Technologies

Describe MOSFET N-CH 240V 260MA SOT89-4

Classification: Transistors - FETs, MOSFETs - Single

Stock Available

RoHs:

RoHS Compliant

Datasheet

Datasheet

Customer Reference

Available In Stock

Please send RFQ, we will respond immediately

Just Fill in the content with an*

Contact Information

(You can also Log In and fill in automatically)

Message Content *

*

Company Name

*

Contact Name

*

Telephone

*

Email *

*

Product Attributes

Type PARAMETERS

Mfr

Infineon Technologies

Operating Temperature

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C

260mA (Ta)

Mounting Type

Surface Mount

Package

Tape & Reel (TR)^^Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds

97 pF @ 25 V

Supplier Device Package

PG-SOT89-4-2

Drain to Source Voltage (Vdss)

240 V

Package / Case

TO-243AA

Series

SIPMOS®

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

6Ohm @ 260mA, 10V

FET Type

N-Channel

Vgs(th) (Max) @ Id

1.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs

5.5 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Product Status

Obsolete

Vgs (Max)

±20V

Related Products

RJK0358DPA-01-J0

Renesas Electronics America Inc

APT36N90BC3G

Microsemi Corporation

IRLL024Z

Infineon Technologies

SI4660DY-T1-E3

Vishay Siliconix

SQD70140EL-GE3

Vishay Siliconix

DMT3004LFG-13

Diodes Incorporated

IRFR12N25DTRRP

Infineon Technologies

IRLML6302TR

Infineon Technologies

Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031

+86 18576417887

[email protected]

(93638)

Contact Us

WhatsApp:

86-18576417887

telephone:

+86 18576417887

E-Mail:

[email protected]

Skype:

guoyaolong520

TOP

RFQ List ( 0 items)