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IRF7820PBF

IRF7820PBF
Infineon Technologies
MOSFET N CH 200V 3.7A 8-SO
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tube
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
78mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1750 pF @ 100 V
Supplier Device Package
8-SO
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Discontinued at Digi-Key
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
±20V
Series
HEXFET®
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Mfr
Infineon Technologies
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Vgs(th) (Max) @ Id
5V @ 100µA
Drain to Source Voltage (Vdss)
200 V
Power Dissipation (Max)
2.5W (Ta)
Mounting Type
Surface Mount
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