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DMN10H220LE-13
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DMN10H220LE-13

DMN10H220LE-13
Diodes Incorporated
MOSFET N-CH 100V 2.3A SOT223
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100 V
Base Product Number
DMN10
FET Feature
-
Package / Case
TO-261-4, TO-261AA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
401 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Mfr
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Product Status
Active
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
220mOhm @ 1.6A, 10V
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Power Dissipation (Max)
1.8W (Ta)
Supplier Device Package
SOT-223-3
Vgs(th) (Max) @ Id
2.5V @ 250µA
Series
-
Package
Tape & Reel (TR)^^Cut Tape (CT)
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