Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. NDC632P
NDC632P
NDC632P
Favorite Products
Share:  

NDC632P

NDC632P
MOSFET P-CH 20V 2.7A SUPERSOT6
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Product Status
Obsolete
Supplier Device Package
SuperSOT™-6
Drain to Source Voltage (Vdss)
20 V
Rds On (Max) @ Id, Vgs
140mOhm @ 2.7A, 4.5V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 10 V
Package
Bulk
Power Dissipation (Max)
1.6W (Ta)
Package / Case
SOT-23-6 Thin, TSOT-23-6
FET Type
P-Channel
Mounting Type
Surface Mount
Series
-
Vgs(th) (Max) @ Id
1V @ 250µA
Mfr
Fairchild Semiconductor
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
Vgs (Max)
-8V
Operating Temperature
-55°C ~ 150°C (TJ)
TOP
RFQ List ( 0 items)