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SIR122LDP-T1-RE3
SIR122LDP-T1-RE3
SIR122LDP-T1-RE3
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SIR122LDP-T1-RE3

SIR122LDP-T1-RE3
Vishay Siliconix
N-CHANNEL 80-V (D-S) MOSFET POWE
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
2.5V @ 250µA
Mfr
Vishay Siliconix
FET Type
N-Channel
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
17.2A (Ta), 62.3A (Tc)
FET Feature
-
Supplier Device Package
PowerPAK® SO-8
Power Dissipation (Max)
5W (Ta), 65.7W (Tc)
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Package / Case
PowerPAK® SO-8
Drain to Source Voltage (Vdss)
80 V
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)^^Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds
2380 pF @ 40 V
Rds On (Max) @ Id, Vgs
7.35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
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