Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. STI33N60M6
STI33N60M6
STI33N60M6
Favorite Products
Share:  

STI33N60M6

STI33N60M6
STMicroelectronics
MOSFET N-CH 600V 25A I2PAK
Available
RoHS Compliant
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
600 V
Vgs(th) (Max) @ Id
4.75V @ 250µA
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±25V
Series
MDmesh™ M6
Mfr
STMicroelectronics
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Product Status
Active
Gate Charge (Qg) (Max) @ Vgs
33.4 nC @ 10 V
Rds On (Max) @ Id, Vgs
125mOhm @ 12.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1515 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Supplier Device Package
I2PAK (TO-262)
Base Product Number
STI33
TOP
RFQ List ( 0 items)