Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

Favorite Products

Share:

SIHU4N80E-GE3

Product Name SIHU4N80E-GE3

Manufacturer Vishay Siliconix

Describe MOSFET N-CH 800V 4.3A IPAK

Classification: Transistors - FETs, MOSFETs - Single

Stock Available

RoHs:

RoHS Compliant

Datasheet

Datasheet

Customer Reference

Available In Stock

Please send RFQ, we will respond immediately

Just Fill in the content with an*

Contact Information

(You can also Log In and fill in automatically)

Message Content *

*

Company Name

*

Contact Name

*

Telephone

*

Email *

*

Product Attributes

Type PARAMETERS

Base Product Number

SIHU4

Package

Tube

Series

E

Product Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4V @ 250µA

Mounting Type

Through Hole

Package / Case

TO-251-3 Long Leads, IPak, TO-251AB

Gate Charge (Qg) (Max) @ Vgs

32 nC @ 10 V

Drain to Source Voltage (Vdss)

800 V

Rds On (Max) @ Id, Vgs

1.27Ohm @ 2A, 10V

Mfr

Vishay Siliconix

FET Type

N-Channel

Vgs (Max)

±30V

FET Feature

-

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

622 pF @ 100 V

Supplier Device Package

IPAK (TO-251)

Power Dissipation (Max)

69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C

4.3A (Tc)

Related Products

SPD02N60C3

Infineon Technologies

IRF1503STRRPBF

Infineon Technologies

SI4466DY-T1-E3

Vishay Siliconix

AOI2N60A

Alpha & Omega Semiconductor Inc.

AUIRF1018E

Infineon Technologies

SK8603150L

Panasonic Electronic Components

IPT019N08N5ATMA1

Infineon Technologies

2SK4145-S19-AY

Renesas Electronics America Inc

Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031

+86 18576417887

[email protected]

(93638)

Contact Us

WhatsApp:

86-18576417887

telephone:

+86 18576417887

E-Mail:

[email protected]

Skype:

guoyaolong520

TOP

RFQ List ( 0 items)