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SI1065X-T1-GE3
SI1065X-T1-GE3
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SI1065X-T1-GE3

SI1065X-T1-GE3
Vishay Siliconix
MOSFET P-CH 12V 1.18A SC89-6
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Obsolete
Supplier Device Package
SC-89 (SOT-563F)
Vgs (Max)
±8V
Mfr
Vishay Siliconix
Package
Tape & Reel (TR)^^Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-563, SOT-666
Input Capacitance (Ciss) (Max) @ Vds
480 pF @ 6 V
Series
TrenchFET®
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
FET Type
P-Channel
Base Product Number
SI1065
Vgs(th) (Max) @ Id
950mV @ 250µA
Rds On (Max) @ Id, Vgs
156mOhm @ 1.18A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
10.8 nC @ 5 V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
1.18A (Ta)
Power Dissipation (Max)
236mW (Ta)
Mounting Type
Surface Mount
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