Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRF351
IRF351
IRF351
Favorite Products
Share:  

IRF351

IRF351
Harris Corporation
N-CHANNEL POWER MOSFET
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
Mounting Type
Through Hole
Series
-
Mfr
Harris Corporation
Vgs(th) (Max) @ Id
4V @ 250µA
Package / Case
TO-204AA, TO-3
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-3
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
FET Feature
-
Package
Bulk
Drain to Source Voltage (Vdss)
350 V
Rds On (Max) @ Id, Vgs
300mOhm @ 8A, 10V
FET Type
N-Channel
TOP
RFQ List ( 0 items)