[email protected]
+86 18576417887
86-18576417887
guoyaolong520
Products
  • Products
  • News
  • Manufacturer
0 item (s)
RFQ Inquiry

Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRFP341
IRFP341
IRFP341
Favorite Products
Share:  

IRFP341

IRFP341
Harris Corporation
N-CHANNEL POWER MOSFET
Transistors - FETs, MOSFETs - Single
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
1250 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Vgs (Max)
±20V
Package
Bulk
Product Status
Active
Power Dissipation (Max)
150W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
350 V
Mfr
Harris Corporation
Rds On (Max) @ Id, Vgs
550mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Mounting Type
Through Hole
Package / Case
TO-247-3
FET Feature
-
Supplier Device Package
TO-247
Related Products
FDS7764S

Fairchild Semiconductor
SQ3425EV-T1-GE3

Vishay Siliconix
BUK7524-55-127

NXP USA Inc.
PHB33NQ20T-118

Nexperia USA Inc.
HUFA75307D3S

Fairchild Semiconductor
STP200NF03

STMicroelectronics
IRL630STRLPBF

Vishay Siliconix
SPD50N03S2-07G

Infineon Technologies

Send
Support
Resources
Contact Us
Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031
5 4 3 2 1
Sitemap

©2016 - 2023 Joinwin Electronics HK Limited All rights reserved

(93638)
TOP
RFQ List ( 0 items)