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JANTXV2N6766

JANTXV2N6766
Microsemi Corporation
MOSFET N-CH 200V 30A TO3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Bulk
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Package / Case
TO-204AE
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Microsemi Corporation
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
115 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Supplier Device Package
TO-3
Product Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Series
Military, MIL-PRF-19500/543
Drain to Source Voltage (Vdss)
200 V
Rds On (Max) @ Id, Vgs
90mOhm @ 30A, 10V
Power Dissipation (Max)
4W (Ta), 150W (Tc)
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
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