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FQP9N50C
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FQP9N50C

FQP9N50C
MOSFET N-CH 500V 9A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Series
QFET®
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Mounting Type
Through Hole
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
800mOhm @ 4.5A, 10V
Mfr
Fairchild Semiconductor
Package
Bulk
Drain to Source Voltage (Vdss)
500 V
Input Capacitance (Ciss) (Max) @ Vds
1030 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
N-Channel
Power Dissipation (Max)
135W (Tc)
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