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SPP02N80C3XKSA1
SPP02N80C3XKSA1
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SPP02N80C3XKSA1

SPP02N80C3XKSA1
Infineon Technologies
MOSFET N-CH 800V 2A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Base Product Number
SPP02N
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-220-3
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Package
Tube
FET Type
N-Channel
Vgs(th) (Max) @ Id
3.9V @ 120µA
Supplier Device Package
PG-TO220-3
Mfr
Infineon Technologies
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Rds On (Max) @ Id, Vgs
2.7Ohm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 100 V
Series
CoolMOS™
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