Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. BSC020N025S-G
BSC020N025S-G
BSC020N025S-G
Favorite Products
Share:  

BSC020N025S-G

BSC020N025S-G
Infineon Technologies
MOSFET N-CH 25V 30A/100A TDSON
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
8290 pF @ 15 V
Supplier Device Package
PG-TDSON-8-1
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
2mOhm @ 50A, 10V
Mfr
Infineon Technologies
Package
Tape & Reel (TR)^^Cut Tape (CT)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Series
OptiMOS™
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 100A (Tc)
Vgs(th) (Max) @ Id
2V @ 110µA
Power Dissipation (Max)
2.8W (Ta), 104W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Obsolete
FET Feature
-
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
TOP
RFQ List ( 0 items)