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AUIRF2903ZS

AUIRF2903ZS
Infineon Technologies
MOSFET N-CH 30V 160A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
160A (Tc)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mfr
Infineon Technologies
FET Feature
-
Rds On (Max) @ Id, Vgs
2.4mOhm @ 75A, 10V
Power Dissipation (Max)
231W (Tc)
Package
Tube
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
6320 pF @ 25 V
Series
HEXFET®
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id
4V @ 150µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
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