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IRF6706S2TR1PBF
IRF6706S2TR1PBF
IRF6706S2TR1PBF
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IRF6706S2TR1PBF

IRF6706S2TR1PBF
Infineon Technologies
MOSFET N-CH 25V 17A DIRECTFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package / Case
DirectFET™ Isometric S1
Series
HEXFET®
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mfr
Infineon Technologies
Drain to Source Voltage (Vdss)
25 V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Supplier Device Package
DirectFET™ Isometric S1
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.8W (Ta), 26W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Package
Tape & Reel (TR)^^Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds
1810 pF @ 13 V
FET Feature
-
Product Status
Obsolete
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
Vgs (Max)
±20V
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.8mOhm @ 17A, 10V
Mounting Type
Surface Mount
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