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BSB024N03LX-G

BSB024N03LX-G
Infineon Technologies
MOSFET N-CH 30V 27A/145A 2WDSON
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
FET Feature
-
Mfr
Infineon Technologies
Product Status
Obsolete
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 15 V
Package / Case
3-WDSON
Technology
MOSFET (Metal Oxide)
Package
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs
2.4mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Supplier Device Package
MG-WDSON-2, CanPAK M™
Current - Continuous Drain (Id) @ 25°C
27A (Ta), 145A (Tc)
Power Dissipation (Max)
2.8W (Ta), 78W (Tc)
Series
OptiMOS™
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Operating Temperature
-40°C ~ 150°C (TJ)
Vgs (Max)
±20V
Mounting Type
Surface Mount
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