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SI3424BDV-T1-GE3
SI3424BDV-T1-GE3
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SI3424BDV-T1-GE3

SI3424BDV-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 8A 6TSOP
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Base Product Number
SI3424
Package / Case
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs
28mOhm @ 7A, 10V
Series
TrenchFET®
FET Feature
-
FET Type
N-Channel
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Mfr
Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds
735 pF @ 15 V
Supplier Device Package
6-TSOP
Package
Tape & Reel (TR)^^Cut Tape (CT)
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.6 nC @ 10 V
Vgs (Max)
±20V
Power Dissipation (Max)
2.1W (Ta), 2.98W (Tc)
Drain to Source Voltage (Vdss)
30 V
Technology
MOSFET (Metal Oxide)
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