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SISS80DN-T1-GE3
SISS80DN-T1-GE3
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SISS80DN-T1-GE3

SISS80DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 58.3A/210A PPAK
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tape & Reel (TR)^^Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C
58.3A (Ta), 210A (Tc)
Mounting Type
Surface Mount
Mfr
Vishay Siliconix
FET Type
N-Channel
Product Status
Active
Input Capacitance (Ciss) (Max) @ Vds
6450 pF @ 10 V
Series
TrenchFET® Gen IV
Drain to Source Voltage (Vdss)
20 V
Power Dissipation (Max)
5W (Ta), 65W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs (Max)
+12V, -8V
Supplier Device Package
PowerPAK® 1212-8S
Base Product Number
SISS80
Package / Case
PowerPAK® 1212-8S
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
0.92mOhm @ 10A, 10V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 10 V
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