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BSP318S-E6327
BSP318S-E6327
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BSP318S-E6327

BSP318S-E6327
Infineon Technologies
MOSFET N-CH 60V 2.6A SOT223-4
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
2V @ 20µA
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)
Supplier Device Package
PG-SOT223-4
Series
SIPMOS®
Rds On (Max) @ Id, Vgs
90mOhm @ 2.6A, 10V
Package
Tape & Reel (TR)
Mfr
Infineon Technologies
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 25 V
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
1.8W (Ta)
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
FET Type
N-Channel
Package / Case
TO-261-4, TO-261AA
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