Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. SISS5710DN-T1-GE3
SISS5710DN-T1-GE3
SISS5710DN-T1-GE3
SISS5710DN-T1-GE3
Favorite Products
Share:  

SISS5710DN-T1-GE3

SISS5710DN-T1-GE3
Vishay Siliconix
N-CHANNEL 150 V (D-S) MOSFET POW
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Product Status
Active
Package
Tape & Reel (TR)^^Cut Tape (CT)
Package / Case
PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
31.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Supplier Device Package
PowerPAK® 1212-8S
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Vishay Siliconix
Vgs(th) (Max) @ Id
4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
770 pF @ 75 V
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Vgs (Max)
±20V
Power Dissipation (Max)
4.1W (Ta), 54.3W (Tc)
Series
TrenchFET®
Current - Continuous Drain (Id) @ 25°C
7.2A (Ta), 26.2A (Tc)
FET Feature
-
TOP
RFQ List ( 0 items)