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IPN80R3K3P7ATMA1
IPN80R3K3P7ATMA1
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IPN80R3K3P7ATMA1

IPN80R3K3P7ATMA1
Infineon Technologies
MOSFET N-CH 800V 1.9A SOT223
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IPN80R3
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
1.9A (Tc)
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 10 V
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
Supplier Device Package
PG-SOT223
Vgs(th) (Max) @ Id
3.5V @ 30µA
Power Dissipation (Max)
6.1W (Tc)
Series
CoolMOS™ P7
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Active
Drain to Source Voltage (Vdss)
800 V
Package / Case
TO-261-4, TO-261AA
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.3Ohm @ 590mA, 10V
Mounting Type
Surface Mount
Mfr
Infineon Technologies
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 500 V
FET Feature
-
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