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IPB100N06S3-03
IPB100N06S3-03
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IPB100N06S3-03

IPB100N06S3-03
Infineon Technologies
MOSFET N-CH 55V 100A TO263-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3mOhm @ 80A, 10V
Package
Tape & Reel (TR)
Drain to Source Voltage (Vdss)
55 V
Gate Charge (Qg) (Max) @ Vgs
480 nC @ 10 V
Supplier Device Package
PG-TO263-3-2
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds
21620 pF @ 25 V
Mounting Type
Surface Mount
Product Status
Obsolete
Base Product Number
IPB100N
FET Type
N-Channel
FET Feature
-
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 175°C (TJ)
Series
OptiMOS™
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Vgs(th) (Max) @ Id
4V @ 230µA
Power Dissipation (Max)
300W (Tc)
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