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FQU8N25TU

FQU8N25TU
MOSFET N-CH 250V 6.2A IPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Series
QFET®
Mounting Type
Through Hole
Product Status
Obsolete
Package
Tube
Vgs (Max)
±30V
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Mfr
Fairchild Semiconductor
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
550mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
FET Type
N-Channel
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
6.2A (Tc)
Vgs(th) (Max) @ Id
5V @ 250µA
FET Feature
-
Technology
MOSFET (Metal Oxide)
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