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HUF76129P3
HUF76129P3
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HUF76129P3

HUF76129P3
Harris Corporation
N-CHANNEL POWER MOSFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package / Case
TO-220-3
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16Ohm @ 56A, 10V
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Mounting Type
Through Hole
FET Type
N-Channel
Supplier Device Package
TO-220AB
Mfr
Harris Corporation
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Power Dissipation (Max)
105W (Tc)
Series
UltraFET™
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 25 V
Operating Temperature
-40°C ~ 150°C (TJ)
Product Status
Active
FET Feature
-
Package
Bulk
Drain to Source Voltage (Vdss)
30 V
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±20V
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