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IRF6609TR1PBF
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IRF6609TR1PBF

IRF6609TR1PBF
Infineon Technologies
MOSFET N-CH 20V 31A DIRECTFET
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
6290 pF @ 10 V
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2mOhm @ 31A, 10V
Mounting Type
Surface Mount
Series
HEXFET®
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
DirectFET™ Isometric MT
Drain to Source Voltage (Vdss)
20 V
Operating Temperature
-40°C ~ 150°C (TJ)
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Obsolete
Power Dissipation (Max)
1.8W (Ta), 89W (Tc)
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 4.5 V
FET Feature
-
Mfr
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C
31A (Ta), 150A (Tc)
Vgs(th) (Max) @ Id
2.45V @ 250µA
Supplier Device Package
DIRECTFET™ MT
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