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IPP029N06NAKSA1
IPP029N06NAKSA1
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IPP029N06NAKSA1

IPP029N06NAKSA1
Infineon Technologies
MOSFET N-CH 60V 24A/100A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±20V
Mfr
Infineon Technologies
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 30 V
Rds On (Max) @ Id, Vgs
2.9mOhm @ 100A, 10V
Package / Case
TO-220-3
Base Product Number
IPP029
Series
OptiMOS™
Product Status
Active
FET Feature
-
Supplier Device Package
PG-TO220-3
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
24A (Ta), 100A (Tc)
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Vgs(th) (Max) @ Id
2.8V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3W (Ta), 136W (Tc)
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