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IPU13N03LA-G

Product Name IPU13N03LA-G

Manufacturer Infineon Technologies

Describe MOSFET N-CH 25V 30A TO251-3

Classification: Transistors - FETs, MOSFETs - Single

Stock Available

RoHs:

RoHS Compliant

Datasheet

Datasheet

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Available In Stock

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Product Attributes

Type PARAMETERS

Supplier Device Package

P-TO251-3-1

Package

Tube

Operating Temperature

-55°C ~ 175°C (TJ)

Gate Charge (Qg) (Max) @ Vgs

8.3 nC @ 5 V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Base Product Number

IPU13N

Series

OptiMOS™

Power Dissipation (Max)

46W (Tc)

FET Type

N-Channel

Drain to Source Voltage (Vdss)

25 V

Rds On (Max) @ Id, Vgs

12.8mOhm @ 30A, 10V

Product Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Vgs (Max)

±20V

FET Feature

-

Mfr

Infineon Technologies

Vgs(th) (Max) @ Id

2V @ 20µA

Input Capacitance (Ciss) (Max) @ Vds

1043 pF @ 15 V

Technology

MOSFET (Metal Oxide)

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Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031

+86 18576417887

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