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SIDR626LEP-T1-RE3
SIDR626LEP-T1-RE3
SIDR626LEP-T1-RE3
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SIDR626LEP-T1-RE3

SIDR626LEP-T1-RE3
Vishay Siliconix
N-CHANNEL 60 V (D-S) 175C MOSFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
FET Feature
-
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Power Dissipation (Max)
7.5W (Ta), 150W (Tc)
Supplier Device Package
PowerPAK® SO-8DC
Package / Case
PowerPAK® SO-8
Drain to Source Voltage (Vdss)
60 V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 20A, 10V
Mfr
Vishay Siliconix
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 175°C (TJ)
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)^^Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds
5900 pF @ 30 V
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
48.7A (Ta), 218A (Tc)
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V
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