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SPW11N80C3FKSA1
SPW11N80C3FKSA1
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SPW11N80C3FKSA1

SPW11N80C3FKSA1
Infineon Technologies
MOSFET N-CH 800V 11A TO247-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tube
Rds On (Max) @ Id, Vgs
450mOhm @ 7.1A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Series
CoolMOS™
FET Type
N-Channel
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Product Status
Not For New Designs
Gate Charge (Qg) (Max) @ Vgs
85 nC @ 10 V
Mfr
Infineon Technologies
Vgs(th) (Max) @ Id
3.9V @ 680µA
Vgs (Max)
±20V
Mounting Type
Through Hole
Power Dissipation (Max)
156W (Tc)
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Supplier Device Package
PG-TO247-3-1
Base Product Number
SPW11N80
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 100 V
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