Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. AUIRF5210STRL
AUIRF5210STRL
AUIRF5210STRL
Favorite Products
Share:  

AUIRF5210STRL

AUIRF5210STRL
Infineon Technologies
MOSFET P-CH 100V 38A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4V @ 250µA
Power Dissipation (Max)
3.1W (Ta), 170W (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
AUIRF5210
Mfr
Infineon Technologies
Product Status
Active
Rds On (Max) @ Id, Vgs
60mOhm @ 38A, 10V
Mounting Type
Surface Mount
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2780 pF @ 25 V
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Supplier Device Package
D2PAK
Package
Tape & Reel (TR)^^Cut Tape (CT)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
TOP
RFQ List ( 0 items)