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IRF6633TR1PBF
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IRF6633TR1PBF

IRF6633TR1PBF
Infineon Technologies
MOSFET N-CH 20V 16A DIRECTFET
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Supplier Device Package
DIRECTFET™ MP
Vgs(th) (Max) @ Id
2.2V @ 250µA
FET Feature
-
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Obsolete
Package / Case
DirectFET™ Isometric MP
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
16A (Ta), 59A (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
1250 pF @ 10 V
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 4.5 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.6mOhm @ 16A, 10V
Vgs (Max)
±20V
Power Dissipation (Max)
2.3W (Ta), 89W (Tc)
Series
HEXFET®
FET Type
N-Channel
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