Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

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FQA65N20

FQA65N20
POWER FIELD-EFFECT TRANSISTOR, 6
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Rds On (Max) @ Id, Vgs
32mOhm @ 32.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds
7900 pF @ 25 V
Supplier Device Package
TO-3PN
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±30V
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
Power Dissipation (Max)
310W (Tc)
Mfr
Fairchild Semiconductor
Series
QFET®
Package / Case
TO-3P-3, SC-65-3
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