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SIDR668ADP-T1-RE3
SIDR668ADP-T1-RE3
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SIDR668ADP-T1-RE3

SIDR668ADP-T1-RE3
Vishay Siliconix
MOSFET N-CH 100V 23.3A/104A PPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Series
TrenchFET® Gen IV
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 10 V
Rds On (Max) @ Id, Vgs
4.8mOhm @ 20A, 10V
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Vishay Siliconix
FET Type
N-Channel
Power Dissipation (Max)
6.25W (Ta), 125W (Tc)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8DC
Base Product Number
SIDR668
Package / Case
PowerPAK® SO-8
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
4V @ 250µA
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
23.3A (Ta), 104A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
3750 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
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