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IPI023NE7N3-G

IPI023NE7N3-G
Infineon Technologies
MOSFET N-CH 75V 120A TO262-3
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Series
OptiMOS™
Supplier Device Package
PG-TO262-3
Mfr
Infineon Technologies
FET Type
N-Channel
Drain to Source Voltage (Vdss)
75 V
Operating Temperature
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id
3.8V @ 273µA
Product Status
Obsolete
Package
Tube
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
2.3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs
206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
14400 pF @ 37.5 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Base Product Number
IPI023N
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