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SPB04N60C3ATMA1

SPB04N60C3ATMA1
Infineon Technologies
MOSFET N-CH 650V 4.5A TO263-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
490 pF @ 25 V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Power Dissipation (Max)
50W (Tc)
Drain to Source Voltage (Vdss)
650 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number
SPB04N
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
950mOhm @ 2.8A, 10V
FET Feature
-
Series
CoolMOS™
Product Status
Obsolete
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
3.9V @ 200µA
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
PG-TO263-3-2
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