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SPP04N50C3HKSA1
SPP04N50C3HKSA1
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SPP04N50C3HKSA1

SPP04N50C3HKSA1
Infineon Technologies
MOSFET N-CH 560V 4.5A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Mfr
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
Mounting Type
Through Hole
Package / Case
TO-220-3
Package
Tube
Rds On (Max) @ Id, Vgs
950mOhm @ 2.8A, 10V
Vgs (Max)
±20V
Base Product Number
SPP04N
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Power Dissipation (Max)
50W (Tc)
Series
CoolMOS™
Vgs(th) (Max) @ Id
3.9V @ 200µA
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
560 V
FET Feature
-
Supplier Device Package
PG-TO220-3-1
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