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SI4866BDY-T1-E3
SI4866BDY-T1-E3
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SI4866BDY-T1-E3

SI4866BDY-T1-E3
Vishay Siliconix
MOSFET N-CH 12V 21.5A 8SO
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Vgs (Max)
±8V
Package / Case
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs
5.3mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 4.5 V
Series
TrenchFET®
Input Capacitance (Ciss) (Max) @ Vds
5020 pF @ 6 V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
21.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Mounting Type
Surface Mount
FET Type
N-Channel
Drain to Source Voltage (Vdss)
12 V
Vgs(th) (Max) @ Id
1V @ 250µA
FET Feature
-
Power Dissipation (Max)
4.45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Vishay Siliconix
Base Product Number
SI4866
Technology
MOSFET (Metal Oxide)
Supplier Device Package
8-SOIC
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