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DMT8012LFG-13

DMT8012LFG-13
Diodes Incorporated
MOSFET N-CH 80V PWRDI3333
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package / Case
8-PowerVDFN
Mfr
Diodes Incorporated
Rds On (Max) @ Id, Vgs
16mOhm @ 12A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
9.5A (Ta), 35A (Tc)
Base Product Number
DMT8012
Package
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Supplier Device Package
PowerDI3333-8
Drain to Source Voltage (Vdss)
80 V
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1949 pF @ 40 V
FET Feature
-
Series
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
FET Type
N-Channel
Vgs(th) (Max) @ Id
3V @ 250µA
Power Dissipation (Max)
2.2W (Ta), 30W (Tc)
Product Status
Active
Vgs (Max)
±20V
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