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SIHB33N60ET5-GE3
SIHB33N60ET5-GE3
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SIHB33N60ET5-GE3

SIHB33N60ET5-GE3
Vishay Siliconix
MOSFET N-CH 600V 33A TO263
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Package
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs
99mOhm @ 16.5A, 10V
Supplier Device Package
D²PAK (TO-263)
Base Product Number
SIHB33
Mfr
Vishay Siliconix
Drain to Source Voltage (Vdss)
600 V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
3508 pF @ 100 V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Series
E
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
278W (Tc)
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