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SIR172ADP-T1-GE3
SIR172ADP-T1-GE3
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SIR172ADP-T1-GE3

SIR172ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 24A PPAK SO-8
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mounting Type
Surface Mount
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
±20V
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Vishay Siliconix
Package / Case
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
FET Feature
-
Package
Tape & Reel (TR)^^Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds
1515 pF @ 15 V
Supplier Device Package
PowerPAK® SO-8
Product Status
Active
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
29.8W (Tc)
Base Product Number
SIR172
Series
TrenchFET®
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
2.4V @ 250µA
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